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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4101DY-T1-GE3

SI4101DY-T1-GE3

Electro-Films (EFI) / Vishay

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Part Number SI4101DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 25.7A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 122923 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.397$0.347$0.268$0.198$0.159
Submit a Request For Quotation on quantities greater than those displayed.
Target Price(USD):
Quantity:
Total:
$0.397

Product parameter

Part Number SI4101DY-T1-GE3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET P-CH 30V 25.7A 8SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 122923 pcs
Data sheet SI4101DY-T1-GE3
Category Discrete Semiconductor Products
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series TrenchFET®
Rds On (Max) @ Id, Vgs 6 mOhm @ 15A, 10V
Power Dissipation (Max) 6W (Tc)
Packaging Cut Tape (CT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4101DY-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 8190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30V
Detailed Description P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 25.7A (Tc)
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