TK10Q60W,S1VQ
Toshiba Semiconductor and Storage
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Dowload TK10Q60W,S1VQ Details in PDF| Part Number | TK10Q60W,S1VQ |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 600V 9.7A IPAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 1 pcs | ||||
|---|---|---|---|---|---|
| $1.256 | |||||
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Product parameter
| Part Number | TK10Q60W,S1VQ |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 600V 9.7A IPAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 31118 pcs |
| Data sheet | TK10Q60W |
| Product Photo | TK10Q60W,S1VQ-001.jpg , TK10Q60W,S1VQ-002.jpg |
| Category | Discrete Semiconductor Products |
| Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | I-PAK |
| Series | DTMOSIV |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.9A, 10V |
| Power Dissipation (Max) | 80W (Tc) |
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Other Names | TK10Q60W,S1VQ(S TK10Q60WS1VQ |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 9.7A (Ta) 80W (Tc) Through Hole I-PAK |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
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