RN1961(TE85L,F)
Toshiba Semiconductor and Storage
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Dowload RN1961(TE85L,F) Details in PDFPart Number | RN1961(TE85L,F) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN PREBIAS 0.2W US6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Reference Price (In US Dollars) | 1 pcs | 10 pcs | 25 pcs | 100 pcs | 250 pcs |
---|---|---|---|---|---|
$0.206 | $0.148 | $0.115 | $0.087 | $0.062 |
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Product parameter
Part Number | RN1961(TE85L,F) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN PREBIAS 0.2W US6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 380941 pcs |
Data sheet | RN1961-66 |
Product Photo | RN1961(TE85L,F).jpg |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | US6 |
Series | - |
Resistor - Emitter Base (R2) | 4.7 kOhms |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 200mW |
Packaging | Cut Tape (CT) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Other Names | RN1961(TE85LF)CT |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
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