RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
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Dowload RN1910FE(T5L,F,T) Details in PDFPart Number | RN1910FE(T5L,F,T) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Reference Price (In US Dollars) | 1 pcs | 10 pcs | 25 pcs | ||
---|---|---|---|---|---|
$0.154 | $0.111 | $0.086 | |||
100 pcs | 250 pcs | 500 pcs | |||
$0.065 | $0.046 | $0.037 |
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Product parameter
Part Number | RN1910FE(T5L,F,T) |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN PREBIAS 0.1W ES6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 515495 pcs |
Data sheet | RN1910,11FE Datasheet |
Product Photo | RN1910FE(T5L,F,T).jpg |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | ES6 |
Series | - |
Resistor - Emitter Base (R2) | - |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 100mW |
Packaging | Cut Tape (CT) |
Package / Case | SOT-563, SOT-666 |
Other Names | RN1910FE(T5LFT)CT |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
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