HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
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Dowload HN1C01F-GR(TE85L,F Details in PDFPart Number | HN1C01F-GR(TE85L,F |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN 50V 0.15A SM6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Reference Price (In US Dollars) | 1 pcs | 10 pcs | 25 pcs | ||
---|---|---|---|---|---|
$0.151 | $0.107 | $0.084 |
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Product parameter
Part Number | HN1C01F-GR(TE85L,F |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2NPN 50V 0.15A SM6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 226564 pcs |
Data sheet | HN1C01F |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Transistor Type | 2 NPN (Dual) |
Supplier Device Package | SM6 |
Series | - |
Power - Max | 300mW |
Packaging | Cut Tape (CT) |
Package / Case | SC-74, SOT-457 |
Other Names | HN1C01F-GR(TE85LF)CT HN1C01F-GR(TE85LF)CT-ND HN1C01F-GR(TE85LFCT |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 800MHz |
Detailed Description | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 800MHz 300mW Surface Mount SM6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 150mA |
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