SIHU4N80E-GE3
Electro-Films (EFI) / Vishay
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Buy SIHU4N80E-GE3 with confidence from Components-Store.com, 1 Year Warranty
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Dowload SIHU4N80E-GE3 Details in PDF| Part Number | SIHU4N80E-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHAN 800V TO-251 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | 1 pcs | 10 pcs | 100 pcs | 500 pcs | 1000 pcs |
|---|---|---|---|---|---|
| $0.797 | $0.718 | $0.577 | $0.449 | $0.372 | |
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- Data sheet
Product parameter
| Part Number | SIHU4N80E-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET N-CHAN 800V TO-251 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 86199 pcs |
| Data sheet | SIHU4N80E |
| Category | Discrete Semiconductor Products |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | IPAK (TO-251) |
| Series | E |
| Rds On (Max) @ Id, Vgs | 1.27 Ohm @ 2A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Packaging | Tube |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 622pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Detailed Description | N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
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